any changing of specification will not be informed individual S9018 npn silicon general purpose transistor devi ce m arki n g S9018 = j8 power dissipation pcm : 0.2 w collector current icm : 0.05 a collector-base voltage features collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente 1 2 v (br)cbo : 25 v operating & storage junction temperature t j , t stg : - 55 o c ~ + 150 o c 3 e l e c t r i c al ch ar ac t e r i s t i c s (t a m b = 2 5 u n l ess o t h er w i se sp eci f i ed ) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t c o l l ec t o r - b as e b r eakdow n vo l t ag e v ( b r) cb o i c = 100 a, i e =0 25 v c o l l e c t o r - e m i t t er br ea kdow n vo l t age v ( b r) ce o ic = 0 .1 m a , i b =0 18 v e m i t t e r - b ase br eak dow n vo l t age v ( br ) ebo i e =100 a, i c =0 4 v c o lle c to r c u t-o ff c u rre n t i cb o v cb =20v , i e =0 0. 1 a c o lle c to r c u t-o ff c u rre n t i ce o v ce =15v , i b =0 0. 1 a e m i t t e r cut - of f cur r ent i ebo v eb = 3 v , i c =0 0. 1 a d c cur r ent ga i n h fe (1 ) v ce =5v , i c = 1 m a 70 190 c o l l ec t o r - e m i t t er sat u r a t i o n vo l t a g e v ce (s a t ) i c =10 m a, i b = 1 m a 0. 5 v b ase- e m i t t e r sat u r at i o n vo l t ag e v be (s a t ) i c =10 m a, i b = 1 m a 1. 4 v t r ans i t i on f r e quency f t v ce =5v , i c = 5 m a f= 4 00m h z 600 m h z 01 -jun-2004 rev. b page 1 of 1 rohs compliant product a suffix of "-c" specifies halogen & lead-free
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